Силиконов карбид (SIC) е високоефективна структурна керамика за повишени температури, известни със своите изключителни свойства, включително висока якост, висока твърдост, висока топлопроводимост, нисък коефициент на термично разширение, както и отлично устойчивост на окисляване, устойчивост на корозия и съпротивление на износване .} тези атрибути правят широко приложимо в брой на сваля сектори .
However, SiC is a material characterized by strong covalent bonding. During sintering, atomic diffusion rates are exceedingly low, and both grain boundary sliding resistance and thermal stability are high. Consequently, achieving densification typically necessitates the use of sintering aids or specialized sintering techniques such as hot isostatic pressing (HIP), pressureless sintering, или реакция синтероване .
Reaction-bonded silicon carbide (RBSC), in particular, was initially invented by Popper at the British Ceramic Research Association (BCRA) in the 1950s. The fundamental principle involves the infiltration of a reactive liquid silicon or silicon alloy, driven by capillary forces, into a porous carbon-containing ceramic green body. The liquid silicon reacts with the carbon within the body to form new silicon carbide. This newly formed silicon carbide bonds *in situ* with the original silicon carbide particles present in the green body. Simultaneously, the infiltrant fills the remaining pores within the body, thereby completing the densification process.
Compared to other SiC ceramic fabrication processes, RBSC offers distinct advantages: lower sintering temperatures, near-net-shape forming capability, high strength at elevated temperatures, dimensional stability under high-temperature use, high thermal conductivity, oxidation resistance, good chemical stability, and exceptionally long service life. As a result, RBSC has found extensive application in various high-tech fields demanding Високотемпературна стабилност .
През последното десетилетие бързото разширяване на фотоволтаичната индустрия доведе до значителен растеж на пазарното търсене на реакционно свързване на силициев карбид (RB-SIC) керамика . съответно, както броят, така и производствената скала на вътрешните производители на RB-SIC в Китай показаха постоянен годишен растеж.
През годините на индустриално валидиране, RB-SIC технологията се оказа особено успешна в производството на критични керамични компоненти за второ поколение (2G) и поколение 2 . 5 (2.5G) фотоволтаични клетъчни линии.
Since the second half of 2023, intensified competition among suppliers of reaction-bonded silicon carbide (RB-SiC) to the photovoltaic (PV) industry has emerged, driven by fluctuations in the international environment and market demand. Under such circumstances, RB-SiC manufacturers must prioritize enhancing their product quality and continuously improving competitiveness to secure survival and growth through core technological Предимства .
Едновременно с това, бързото развитие на полупроводниковите схеми на полупроводника в Китай (IC), дискретни устройства, оптоелектронни устройства и сензори. Полупроводниково производство, използвано както през зрели, така и за усъвършенствани процесорни възли .
However, the supply of these high-value components remains dominated by a limited number of foreign companies. Protracted lead times and prohibitively high prices hinder the urgent need for high-quality development among domestic chip manufacturers. Therefore, localization (import substitution) remains the primary focus for industry players striving to overcome these supply chain challenges.
